BRGP040070PFD
+
  • BRGP040070PFD

Product Technical Specifications

Brand: Borui Jixin
Frequency (GHz): DC–4
PSAT(W): 70
Gain (dB): 15.1
PAE (%): 48.6
Vd(V):28
Encapsulation: Metal-Ceramic

Keywords:

Transistor, GaN power transistor

BRGP040070PFD

A dual-gallium nitride (GaN) broadband power amplifier

Category:

Brand:

Borui Jixin

Encapsulation:

Metal-ceramic

Description:

Frequency (GHz): DC–4 / Psat (W): 70 / Gain (dB): 15.1

Share now

  • Product Description
  • Description
  • Brand: Borui Jixin
    Frequency (GHz): DC–4
    PSAT(W): 70
    Gain (dB): 15.1
    PAE (%): 48.6
    Vd(V):28
    Encapsulation: Metal-Ceramic
  • Frequency (GHz): DC–4 / Psat (W): 70 / Gain (dB): 15.1

Keywords:

Transistor, GaN power transistor

High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
High-Performance Monolithic Low-Noise Amplifier
Learn more Learn more
Low-noise amplifier chip for GPS receivers
Learn more Learn more
< 1234...356 >

Do you need our help?

Please provide your phone number and email address, and we’ll reach out to you promptly within one business day to address your issue as soon as possible.

View the Privacy Protection Commitment
Submit now