Product Technical Specifications
Brand: Borui Jixin
Frequency (GHz): DC–2.5
PSAT(W): 250
Gain (dB): 16.4
PAE (%): 61
Vd(V):28
Encapsulation: PN (ceramic package)
Frequency (GHz): DC–2.5
PSAT(W): 250
Gain (dB): 16.4
PAE (%): 61
Vd(V):28
Encapsulation: PN (ceramic package)
Keywords:
Transistor, GaN power transistor
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BRGP025250PND
A pre-matched push-pull power amplifier designed using GaN HEMT technology
Brand:
Borui Jixin
Encapsulation:
PN (Ceramic Seal)
Description:
Frequency (GHz): DC–2.5 / Psat (W): 250 / Gain (dB): 16.4
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- Product Description
- Description
-
Brand: Borui Jixin
Frequency (GHz): DC–2.5
PSAT(W): 250
Gain (dB): 16.4
PAE (%): 61
Vd(V):28
Encapsulation: PN (ceramic package)
- Frequency (GHz): DC–2.5 / Psat (W): 250 / Gain (dB): 16.4
Keywords:
Transistor, GaN power transistor
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